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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 25: CE#-Controlled Program AC Timing (16-Bit Mode)
t WC
3rd Cycle
4th Cycle
Data Polling
A[MAX:0]
t WS
555h
t AS
t WH
PA
t AH
PA
WE#
t GHEL
OE#
CE#
t CP
t DS
t CPH
t WHWH1
DQ[15:0]
AOh
PD
DQ7#
D OUT
t DH
Notes:
1. Only the third and fourth cycles of the PROGRAM command are represented. The PRO-
GRAM command is followed by checking of the status register data polling bit.
2. PA is the address of the memory location to be programmed. PD is the data to be pro-
grammed.
3. DQ7 is the complement of the data bit being programmed to DQ7 (See Data Polling Bit
[DQ7]).
4. See the following tables for timing details: Read AC Characteristics, WE#-Controlled
Write AC Characteristics, and CE#-Controlled Write AC Characteristics.
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. B 8/12 EN
67
Micron Technology, Inc. reserves the right to change products or specifications without notice.
? 2012 Micron Technology, Inc. All rights reserved.
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